Tianyue Advanced Technology has reached a cooperation agreement with Toshiba Electronic Components.

On August 22, Toshiba Electronic Components and Tianyue Advanced reached a basic agreement on the substrate for SiC power semiconductors developed and manufactured by Tianyue Advanced. The two parties will carry out the following cooperation: technical collaboration aimed at improving the characteristics and quality of SiC power semiconductors, as well as commercial cooperation to expand the supply of high-quality and stable substrates using the results of the cooperation.