Chinese scientists have pioneered the "steamer" method to "grow" high-performance transistor new materials.

Integrated circuits are the core foundation of modern information technology. In recent years, as the performance of silicon-based chips gradually approaches physical limits, the development of new high-performance, low-energy semiconductor materials has become a global focus of technological research and development. Among them, two-dimensional layered semiconductor material indium selenide is seen as a new material that has the potential to break the physical limitations of silicon due to its high mobility and fast thermal speed. A research team composed of researchers from Peking University and Renmin University of China has spent four years overcoming challenges and has pioneered a new method called the "steaming basket". They have successfully achieved wafer-level integrated manufacturing of high-quality indium selenide materials for the first time internationally, and have developed transistor devices with core performance surpassing 3-nanometer silicon-based chips. This achievement was published online in the journal "Science" on the 18th.