Lo-Xiao Technology: for the first time, Lo-Xiao in Hefei has successfully prepared a 12-inch silicon carbide single crystal sample.

Recently, Ru Xiao Technology's subsidiary, Hefei Ru Xiao Semiconductor Materials Co., Ltd., has made a key breakthrough in the field of semi-insulating silicon carbide, successfully producing 12-inch silicon carbide single crystal samples for the first time. They have completed the entire process development and testing from crystal growth to substrate, marking a technological breakthrough in building a full range of products in the "conductive + semi-insulating" matrix for Hefei Ru Xiao. This development signals the formation of a crucial force in the large-size race track, hinting at a future victory.