12-inch silicon carbide epitaxial wafers launched in Xiamen

Recently, Xiamen Torch High-tech Zone enterprise Hantian Tiancheng successfully developed the world's first 12-inch high-quality silicon carbide epitaxial wafer, relying on the independent technology breakthrough of the R&D team. This breakthrough will not only significantly improve the production efficiency of downstream power devices, but also greatly reduce the unit manufacturing cost of silicon carbide chips, laying a key foundation for the industrialization and low-cost application of silicon carbide. Currently, Hantian Tiancheng has initiated the preparations for mass production of 12-inch silicon carbide epitaxial wafers. The product performs excellently in key performance indicators: epitaxial layer thickness non-uniformity controlled within 3%, doping concentration non-uniformity 8%, chip yield greater than 96% for 2mm x 2mm, fully meeting the high reliability application requirements in the downstream power device field. It is reported that Hantian Tiancheng is the first in China to achieve commercialization of 3-inch, 4-inch, and 6-inch silicon carbide epitaxial wafer mass production. According to the analysis report from Zhuoshi Consulting, the company has become the largest silicon carbide epitaxial wafer supplier globally in 2023, and is expected to exceed 31% market share in 2024.