Samsung (SSNLF.US) unveiled its 3D memory "technical nuclear bomb": a debut of 400-layer V-NAND and zHBM concepts, aiming for the AI memory throne.

According to the Zhihui Finance APP, on Tuesday local time, Samsung Electronics (SSNLF.US) showcased at the "Future Memory and Storage" conference held in Santa Clara, California, its next-generation memory technologies aimed at the artificial intelligence (AI) era. This includes the over 400-layer V10 BV-NAND prototype, vertically stacked high bandwidth memory zHBM, and zNAND-O architecture, all aimed at consolidating its leading position in the nearly $1 trillion storage chip market and accelerating its catch-up with AI memory pioneers SK Hynix and Micron Technology (MU.US).