Henan's high-end semiconductor breakthrough accelerates, with an annual production of indium phosphide reaching 30 tons, and orders scheduled until the end of next year.

On April 15th, a major semiconductor project in Anyang County, Henan Mingjia Semiconductor Co., Ltd. phase II construction, brought good news as 50 indium phosphide polycrystalline synthesis furnaces entered the commissioning phase. This top domestic ultra-high frequency semiconductor material production line has entered the mass production sprint period, which will drive the explosive growth of domestic indium phosphide core material production capacity and break the overseas supply monopoly. Walking into the production workshop of Mingjia Semiconductor Phase II, 50 indium phosphide polycrystalline synthesis furnaces are neatly arranged, with technicians closely monitoring equipment parameters and carrying out temperature calibration, process debugging, and other work in an orderly manner. "Indium phosphide is the core material for high-end optical communication, autonomous driving lidar, 6G RF devices, and AI computing modules. Its mass production is a bottleneck in the semiconductor industry, relying on imports for a long time, with long supply cycles and high costs severely restricting the development of related industries in China," said Chen Zhengwei, founder and chairman of Mingjia Semiconductor. he added that the current indium phosphide market demand is growing exponentially, heralding a historic development window, with Mingjia Semiconductor facing a 50% supply-demand gap with customers, with orders already scheduled until the end of next year.