Samsung Electronics accelerates the development of next-generation high-bandwidth memory, and the first batch of HBM4E will be produced in May.

Samsung Electronics is fully committed to advancing its research and development process for the next generation high-bandwidth memory products, striving to further solidify its position in the high-end artificial intelligence memory market. According to reports, Samsung Electronics plans to produce the first batch of HBM4E samples that meet NVIDIA standards as early as May 2026. Industry insiders revealed that Samsung has a clear and compact timeline. Their goal is to have the foundry department successfully produce samples of the HBM4E core logic chip before the middle of next month.